Potens semiconductor corp.

Ver.1.01

2

PDB2213S

20V Dual P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=

-250µA

-20

---

---

V

IDSS

Drain-Source Leakage Current

VDS=

-20V , VGS=0V , TJ=25℃

---

---

-1

µA

VDS=

-16V , VGS=0V , TJ=125℃

---

---

-10

µA

IGSS

Gate-Source Leakage Current

VGS=±10V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=

-4.5V , ID=-1.5A

---

41

49

m



VGS=

-2.5V , ID=-1A

---

55

72

m



VGS=

-1.8V , ID=-1A

---

75

100

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =

-250µA

-0.4

-0.6

-1.0

V

gfs

Forward Transconductance

VDS=

-10V , ID=-1A

---

4

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=

-10V , VGS=-4.5V , ID=-2A

---

6.4

10

nC

Qgs

Gate-Source Charge2 , 3

---

0.9

3

Qgd

Gate-Drain Charge2 , 3

---

1.6

5

Td(on)

Turn-On Delay Time2 , 3

VDD=

-10V , VGS=-4.5V , RG=6

ID=

-2A

---

5

10

ns

Tr

Rise Time2 , 3

---

17

25

Td(off)

Turn-Off Delay Time2 , 3

---

40

60

Tf

Fall Time2 , 3

---

11

20

Ciss

Input Capacitance

VDS=

-10V , VGS=0V , F=1MHz

---

540

810

pF

Coss

Output Capacitance

---

80

120

Crss

Reverse Transfer Capacitance

---

75

115

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-4

A

ISM

Pulsed Source Current

---

---

-8

A

VSD

Diode Forward Voltage

VGS=0V , IS=

-1A , TJ=25℃

---

---

-1

V

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.