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V1.0

16/09/19

Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Maximum Ratings:

Characteristic

Symbol

Rating

Unit

Collector - Emitter Voltage

VCEO

80

V

Collector - Base Voltage

IE

Emitter - Base Voltage

IC

7

Collector Current

1

A

Base Current

IB

200

mA

Total Device Dissipation (TC = +25°C)

Ptot

6

W

Total Device Dissipation(TA = +25°C)

1

Operating Junction Temperature

TJ

-65 to +200

°C

Storage Temperature Range

Tstg

Thermal Resistance, Junction-to-Case

RthJC

29

°C/W

Description:

A epitaxial silicon PNP planar transistor in a TO-39 type package designed for use as drivers for high power transistors in

general purpose amplifier and switching circuits.

Collector

3

2

Base

1

Emitter