Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-30

-33

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=-30V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.7

-1.2

-1.8

V

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-10A

-

7

8.3

mΩ

Forward Transconductance

gFS

VDS=-10V,ID=-15A

-

20

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

3515

-

PF

Output Capacitance

Coss

-

410

-

PF

Reverse Transfer Capacitance

Crss

VDS=-15V,VGS=0V,

F=1.0MHz

-

355

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

13

-

nS

Turn-on Rise Time

tr

-

12

-

nS

Turn-Off Delay Time

td(off)

-

48

-

nS

Turn-Off Fall Time

tf

VDD=-15V,ID=-10A

VGS=-10V,RGEN=6Ω

-

14

-

nS

Total Gate Charge

Qg

-

84

-

nC

Gate-Source Charge

Qgs

-

11.9

-

nC

Gate-Drain Charge

Qgd

VDS=-15V,ID=-10A,

VGS=-10V

-

25

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-10A

-

-0.85

-1.2

V

Diode Forward Current

(Note 2)

IS

-

-

-50

A

Reverse Recovery Time

trr

-

-

49

nS

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = -10A

di/dt = 100A/μs(Note3)

-

-

43

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition：Tj=25℃,VDD=-15V,VG=-10V,L=0.5mH,Rg=25Ω

FNK3070PC/D

FNK-Semiconductor

Nov.2016.Rev.1.0

2/8