LCP02-150B1 datasheet(4/8 Pages) STMICROELECTRONICS

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LCP02-150B1

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Symbol

Parameter

Test conditions

Min.

Max.

Unit

IGn

Negative gate trigger

current

VGn/GND = -60V

Measured at 50Hz

5mA

IH-

Holding current

(see fig.2)

Go-No Go test, VGn = -60V

150

IRGL-

Reverse leakage

current Gn/Line

Tj = 25°C, VGn/line = -190V

5µA

VDGL-

Dynamic switching

voltage Gn / Line

(see note 2)

VGn/GND = -60V

10/1000µs 1kV RP =25

Ω IPP = 30A

10/700µs 2kV RP =25

Ω IPP = 30A

1.2/50µs

2kV RP =25

Ω IPP = 30A

1 - PARAMETERS RELATED TO THE NEGATIVE SUPPRESSOR

Symbol

Parameter

Test conditions

Min.

Max.

Unit

IGp

Positive gate trigger

current

VGp/GND = 60V

Measured at 50Hz

5mA

IRGL+

Reverse leakage

current Gp/LINE

Tj = 25°C, VGp/line = +190V

5µA

VDGL+

Dynamic switching

voltage Gp / Line

(see note 2)

VGp/GND = +60V

10/1000µs 1kV RP =25

Ω IPP = 30A

10/700µs 2kV RP =25

Ω IPP = 30A

1.2/50µs

2kV RP =25

Ω IPP = 30A

2 - PARAMETERS RELATED TO THE POSITIVE SUPPRESSOR

Symbol

Parameter

Test conditions

Typ.

Max.

Unit

Reverse

leakage current

Tj = 25°C, VLINE = +90V, VGP/LINE = +1V

Tj = 25°C, VLINE = -105V, VGN/LINE = -1V

µA

Coff

Capacitance

LINE/GND

VR = -3V, F =1MHz, VGp = 60V, VGn = -60V

Note 2: The VDGL value is the difference between the peak line voltage during the surge and the programmed gate voltage.

3 - PARAMETERS RELATED TO LINE/GND

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

LCP02-150B1 Datasheet(PDF) 4 Page - STMicroelectronics

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