LCP150S datasheet(3/6 Pages) STMICROELECTRONICS

3 / 6 page

VSGL

VGL

Ipp

Symbol

Parameter

IGT

Gate Trigger Current

Holding Current

Reverse Leakage Current LINE/GND

IRG

Reverse Leakage Current GATE/LINE

Reverse Voltage LINE/GND

Forward Voltage LINE/GND

VGT

Gate Trigger Voltage

VFP

Peak Forward Voltage LINE/GND

VSGL

Dynamic Switching Voltage

GND/LINE

Vgate

GATE/GND Voltage

VLG

LINE/GND Voltage

Off State Capacitance LINE/GND

Symbol

Test Conditions

Max.

Unit

Square pulse, Tp = 500

µs, IF =5 A

VFP

Ipp = 40 A, 10/1000

µs.

1 - PARAMETERS RELATED TO THE DIODE LINE/GND

Symbol

Tests Conditions

Min.

Max.

Unit

IGT

VGND/LINE = -48 V

0.2

VGATE= -48 V

Note 2

150

VGT

at IGT

2.5

IRG

Tc = 25

°CVRG = -75 V

Tc = 70

°CVRG = -75 V

µA

VSGL

VGATE= -48 V

Note 2

- 63

2 - PARAMETERS RELATED TO PROTECTION THYRISTOR

Symbol

Tests Conditions

Min.

Max.

Unit

Tc = 25

°C-1 < VGL < -Vbat VR = - 85 V

Tc = 70

°C-1 < VGL < -Vbat VR = - 85 V

µA

CVR = - 3 V

F < 1MHz

VR = - 48 V

F < 1MHz

150

3 - PARAMETERS RELATIVE TO DIODE AND PROTECTION THYRISTOR

Note 2 : See test circuit for IH and VSGL.

ELECTRICAL CHARACTERITICS (Tamb =25

°C, unless otherwise specified)

LCP150S

3/6

LCP150S Datasheet(PDF) 3 Page - STMicroelectronics

LCP150S Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL