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BU508AT Datasheet(PDF) 1 Page - Continental Device India Limited |
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BU508AT Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() NPN SILICON PLANAR POWER TRANSISTOR BU508AT TO-220 Plastic Package High Voltage, High-Speed Switching Transistor Intended for use in Horizontal Deflection Circuits of Colour Televisions ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Emitter Voltage VCES Collector Emitter Voltage VCEO Collector Current (DC) IC Collector Current (Peak) ICM Base Current (DC) IB Base Current (Peak) IBM Reverse Base Current (DC or average over any 20 ms period) -IB(AV) Reverse Base Current (Peak Value) *-IBM Power Dissipation upto Tc=25ºC Ptot Operating and Storage Junction Temperature Range Tj, Tstg *Turn off Current ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Cut off Current **ICES VCE=VCES max, VBE=0 1.0 mA Tj=125ºC VCE=VCES max, VBE=0 2.0 mA Emitter Cut off Current IEBO VEB=6V, IC=0 10 mA Collector Emitter Sustaining Voltage *VCEO(sus) IC=100mA, IB=0, L=25mH 700 V DC Current Gain *hFE IC=4.5A, VCE=5V 2.25 Collector Emitter Saturation Voltage *VCE(sat) IC=4.5A, IB=2A 1.0 V Base Emitter Saturation Voltage *VBE(sat) IC=4.5A, IB=2A 1.3 V Transition Frequency fT IC=0.1A, VCE=5V, f=5MHz 7 MHz Collector Capacitance CC IE=ie=0, VCB=10V, f=1MHz 125 pF **Measured with half-sinewave Voltage (curve tracer) *Pulse Test: Pulse Width=5ms, Duty Cycle<10% A W ºC A A A mA UNIT V V A 100 5 60 - 65 to +150 VALUE 1500 700 8 15 4 6 Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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