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PDC0744T Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDC0744T Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 6 page  Potens semiconductor corp. Ver.1.02 1 PDC0744T 100V N+P Dual Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 100 -100 V VGS Gate-Source Voltage ±20 ±20 V ID Drain Current – Continuous (TC=25 ℃) 10 -8 A Drain Current – Continuous (TC=100 ℃) 6.3 -5.1 A Drain Current – Continuous (TA=25 ℃)1 5 -4.5 A IDM Drain Current – Pulsed (TC=25 ℃)2 40 -32 A EAS Single Pulse Avalanche Energy 53 187 mJ IAS Single Pulse Avalanched Current 103 197 A PD Power Dissipation (TC=25 ℃) 39 W Power Dissipation – Derate above TC=25 ℃ 0.313 W/ ℃ Power Dissipation (TA=25 ℃)1 9 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA cont. Thermal Resistance Junction to ambient (Continuous) --- 62 ℃/W RθJA ≦1s Thermal Resistance Junction to ambient (Pw≦1s)1 --- 13.5 ℃/W RθJC Thermal Resistance Junction to Case --- 3.2 ℃/W BVDSS RDSON ID 100V 168m 10A -100V 300m -8A These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Fast switching Green Device Available Suit for 4.5V Gate Drive Applications 100% EAS Guaranteed General Description Features Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics Applications DC Fan Motor Drive Applications Networking Half / Full Bridge Topology PPAK5x6 Dual Pin Configuration S1 D1 G2 S2 G1 D2 D2 2 S2 S1 G2 G1 D1 D1 D2 |
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