SS8050

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVCBO

Collector−Base Breakdown Voltage

IC = 100 mA, IE = 0

40

V

BVCEO

Collector−Emitter Breakdown Voltage

IC = 2 mA, IB = 0

25

V

BVEBO

Emitter−Base Breakdown Voltage

IE = 100 mA, IC = 0

6

V

ICBO

Collector Cut−Off Current

VCB = 35 V, IE = 0

100

nA

IEBO

Emitter Cut−Off Current

VEB = 6 V, IC = 0

100

nA

hFE1

DC Current Gain

VCE = 1 V, IC = 5 mA

45

hFE2

VCE = 1 V, IC = 100 mA

85

300

hFE3

VCE = 1 V, IC = 800 mA

40

VCE(sat)

Collector−Emitter Saturation Voltage

IC = 800 mA, IB = 80 mA

0.5

V

VBE(sat)

Base−Emitter Saturation Voltage

IC = 800 mA, IB = 80 mA

1.2

V

VBE(on)

Base−Emitter On Voltage

VCE = 1 V, IC = 10 mA

1

V

Cob

Output Capacitance

VCB = 10 V, IE = 0, f = 1 MHz

9.0

pF

fT

Current Gain Bandwidth Product

VCE = 10 V, IC = 50 mA

100

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

hFE CLASSIFICATION

Classification

B

C

D

hFE2

85 ~ 160

120 ~ 200

160 ~ 300

ORDERING INFORMATION

Part Number

Top Mark

Package

Shipping

SS8050BBU

S8050B

TO−92−3, case 135AN (Pb−Free)

10,000 Units/ Bulk Box

SS8050CBU

S8050C

TO−92−3, case 135AN (Pb−Free)

10,000 Units/ Bulk Box

SS8050CTA

S8050C

TO−92−3, case 135AR (Pb−Free)

2,000 Units/ Fan−Fold

SS8050DBU

S8050D

TO−92−3, case 135AN (Pb−Free)

10,000 Units/ Bulk Box

SS8050DTA

S8050D

TO−92−3, case 135AR (Pb−Free)

2,000 Units/ Fan−Fold