D400 datasheet(1/2 Pages) ETC

Part #	D400

Description	TO-92MOD Transistor (NPN)

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Low-Frequency power Amp, Electronic Governor Applications

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

25

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

1

A

PC

Collector Power Dissipation

0.9

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10µA, IE=0

25

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=20V, IE=0

1

µA

Emitter cut-off current

IEBO

VEB=4V, IC=0

1

µA

hFE(1)

VCE=2V, IC=50mA

60

560

DC current gain

hFE(2)

VCE=2V, IC=1A

30

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB=50mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB=50mA

1.2

V

Transition frequency

fT

VCE=10V, IC=50mA

180

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

15

pF

CLASSIFICATION OF

hFE(1)

Rank

D

E

F

G

Range

60-120

100-200

160-320

280-560

1. EMITTER

2. COLLECTOR

3. BASE

2SD400

TO-92MOD Transistor (NPN)

TO-92MOD

Dimensions in inches and (millimeters)

Features

1

2

3

4.700

5.100

1.730

2.030

0.400

0.600

0.900

1.100

0.400

0.500

5.800

6.200

4.000

8.400

8.800

2.900

3.100

13.800

14.200

1.600

0.000

0.380

1.500 TYP

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