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PDC6807T Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDC6807T Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 6 page  Potens semiconductor corp. Ver.1.00 1 PDC6807T 60V Dual P-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃) -15 A Drain Current – Continuous (TC=100℃) -9.5 A IDM Drain Current – Pulsed1 -60 A EAS Single Pulse Avalanche Energy2 31 mJ IAS Single Pulse Avalanche Current2 -25 A PD Power Dissipation (TC=25℃) 33 W Power Dissipation – Derate above 25℃ 0.26 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62.5 ℃/W RθJC Thermal Resistance Junction to Case --- 3.8 ℃/W BVDSS RDSON ID -60V 68m -15A These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. -60V,-15A, RDS(ON) =68m Ω@VGS = -10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics Applications Motor Drive Power Tools LED Lighting PPAK5x6 Dual Pin Configuration S1 D1 G2 S2 G1 D2 D2 2 S2 S1 G2 G1 D1 D1 D2 |
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