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PDC6903Z Datasheet(PDF) 1 Page - Potens Semiconductor Corp.

Part # PDC6903Z
Description  60V P-Channel MOSFETs
PDF  7 Pages
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Manufacturer  POTENS [Potens Semiconductor Corp.]
Direct Link  http://potens-semi.com/en/
Logo POTENS - Potens Semiconductor Corp.

PDC6903Z Datasheet(HTML) 1 Page - Potens Semiconductor Corp.

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Potens semiconductor corp.
Ver.1.00
1
PDC6903Z
60V P-Channel MOSFETs
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current
– Continuous (TC=25℃)
-30
A
Drain Current
– Continuous (TC=100℃)
-19
A
IDM
Drain Current
– Pulsed1
-120
A
EAS
Single Pulse Avalanche Energy2
105
mJ
IAS
Single Pulse Avalanche Current2
-46
A
PD
Power Dissipation (TC=25℃)
60
W
Power Dissipation
– Derate above 25℃
0.48
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to ambient
---
62
℃/W
RθJC
Thermal Resistance Junction to Case
---
2.1
℃/W
BVDSS
RDSON
ID
-60V
28m
-30A
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
 -60V,-30A, RDS(ON) =28m
Ω @VGS = -10V
 Improved dv/dt capability
 Fast switching
 Green Device Available
General Description
Features
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Thermal Characteristics
Applications
PPAK3X3 Pin Configuration
D
G
S
 Networking
 Load Switch
 LED applications
D
D D
S
S
D
G
S


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