Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

Weight: 0.004 ounces, 0.13 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at ２５

ambient temperature unless otherwise specified.

MAXIMUM RATINGS

UNITS

Reverse voltage

VR

V

Peak reverse voltage

VRM

V

Average forw ard rectified current

Half w ave rectification w ith resist.load

@TA=25

and f 50Hz

Forw ard surge current @ t<1s and T

J=25

IFSM

A

Pow er dissipation

@ T

A=25

Ptot

mW

Thermal resistance junction to ambient

RθJA

K/W

Junction temperature

TJ

Storage temperature range

TSTG

ELECTRICAL CHARACTERISTICS

UNITS

Forw ard voltage @ I

F=100mA

Leakage current

@T

j=25

Capacitance

@ V

F=V R=0V

f=1MH

Z

CJ

pF

Reverse recovery time

from I

F=30mA to IR=30mA

from I

RR=3mA , RL=100Ω.

IR

VF

V

ns

50

-

-

trr

--

MIN

TYP

2501)

1.5

I(AV)

1.0

5001)

mA

-

-

1

.0

BAV17---BAV21

SMALL SIGNAL SWITCHING DIODES

Case: DO-35,glass case

VOLTAGE RANGE: 20-200 V

CURRENT: 250 mA

Polarity: Color band denotes cathode

DO - 35(GLASS)

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

-

15

MAX

-

-

-

BAV17

BAV18

BAV19

BAV20

BAV21

20

50

100

150

200

25

60

120

200

250

350

175

-55 --- +175

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

at reverse voltage

@Tj=100

1

00

nA

µA

Dimensions in millimeters

Features

Mechanical Data

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