Potens semiconductor corp.

Ver.1.05

2

PDD0903

100V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-100

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

0.06

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=-100V , VGS=0V , TJ=25

℃

---

---

-1

uA

VDS=-80V , VGS=0V , TJ=125

℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-6A

---

75

95

m



VGS=-4.5V , ID=-3A

---

80

110

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

-1.6

-2.2

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-4.46

---

mV/

℃

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=-50V , VGS=-10V , ID=-6A

---

40.4

70

nC

Qgs

Gate-Source Charge3 , 4

---

7.7

15

Qgd

Gate-Drain Charge3 , 4

---

6.6

13

Td(on)

Turn-On Delay Time3 , 4

VDD=-30V , VGS=-10V , RG=6



ID=-1A

---

27

54

ns

Tr

Rise Time3 , 4

---

12

24

Td(off)

Turn-Off Delay Time3 , 4

---

150

300

Tf

Fall Time3 , 4

---

45

90

Ciss

Input Capacitance

VDS=-30V , VGS=0V , F=1MHz

---

2250

3900

pF

Coss

Output Capacitance

---

130

250

Crss

Reverse Transfer Capacitance

---

90

180

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

10

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-18

A

ISM

Pulsed Source Current

---

---

-36

A

VSD

Diode Forward Voltage

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.2

V

trr

Reverse Recovery Time

VR=-100V, IS=-10A

di/dt=100A/µs, TJ=25

℃

---

50

---

ns

Qrr

Reverse Recovery Charge

---

60

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=-25V,VGS=-10V,L=0.1mH,IAS=-33A.,RG=25

,Starting T

J

=25

℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings