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PDD0976B Datasheet(PDF) 3 Page - Potens Semiconductor Corp. |
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PDD0976B Datasheet(HTML) 3 Page - Potens Semiconductor Corp. |
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3 / 5 page ![]() Potens semiconductor corp. Ver.1.00 3 PDD0976B 100V N-Channel MOSFETs 4.0 5.0 6.0 7.0 8.0 5 18 31 44 57 70 Tc=25℃ VGS=6V VGS=10V 0 5 10 15 20 25 0 2 4 6 8 10 Tc=25℃ ID=8A ID=15A 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 0 14 28 42 56 70 25 50 75 100 125 150 0 3 6 9 12 15 0 0.6 1.2 1.8 2.4 3 VGS=2.3V VGS=2.5V VGS=2.7V VGS=4.5V Fig.1 Typical Output Characteristics TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID VDS ,Drain to Source Voltage (V) VGS , Gate to Source Voltage (V) ID , Drain Current (A) |
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