Potens semiconductor corp.

Ver.1.00

2

PDD0984

100V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

100

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.09

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=100V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=85℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance3

VGS=10V , ID=15A

---

18.8

23

m



VGS=10V , ID=15A(TJ=125℃)

---

36

---

m



VGS=4.5V , ID=10A

---

21.0

27

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.9

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-3.96

---

mV/℃

gfs

Forward Transconductance

VDS=10V , ID=3A

---

15

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=50V , VGS=10V , ID=10A

---

47

94

nC

Qgs

Gate-Source Charge3 , 4

---

10

20

Qgd

Gate-Drain Charge3 , 4

---

11

22

Td(on)

Turn-On Delay Time3 , 4

VDD=50V , VGS=10V , RG=3.3



ID=1A

---

12.6

25

ns

Tr

Rise Time3 , 4

---

8.0

16

Td(off)

Turn-Off Delay Time3 , 4

---

42.4

85

Tf

Fall Time3 , 4

---

19.8

40

Ciss

Input Capacitance

VDS=50V , VGS=0V , F=1MHz

---

3180

6200

pF

Coss

Output Capacitance

---

118

230

Crss

Reverse Transfer Capacitance

---

75

150

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

2.2

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

35

A

ISM

Pulsed Source Current3

---

---

70

A

VSD

Diode Forward Voltage3

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time

VGS=0V,IS=10A , di/dt=100A/µs

TJ=25℃

---

34

---

ns

Qrr

Reverse Recovery Charge

---

36

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=50V,VGS=10V,L=0.1mH,IAS=35A.,RG=25,Starting TJ=25℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings