MBR1035 datasheet(1/2 Pages) ISC

Part #	MBR1035

Description	Schottky Barrier Diode

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Schottky Barrier Diode

MBR1035

www.iscsemi.com

1

FEATURES

· Low Forward Voltage Drop

· Low Power Loss/High Efficiency

· High Surge Capacity

APPLICATIONS

· Power Management

· Instrumentation

· Power Supply-Output Recitification

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

35

V

IF(AV)

Average Rectified Forward Current

10

A

IFSM

Non-repetitive Peak Surge Current

(60Hz, Halfwave, Single Phase

Superimposed on Rated Load)

150

A

TJ

Max. Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

TYP

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.0

℃

/W

TO-220C Package

3

1

2

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MBR1035 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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