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MBR1040 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR1040 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Barrier Diode MBR1040 www.iscsemi.com 1 FEATURES · Low Forward Voltage Drop · Low Power Loss, High Efficiency · High Current Capability APPLICATIONS · Free Wheeling Diode · High Frequency Inverters · Polarlity Protection Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 40 V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current (8.3msSingle Half Sine-Wave Superimposed on Rated Load) 150 A TJ Max. Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER TYP UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃ /W TO-220C Package 3 1 2 |
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