STPS30L60CFP datasheet(3/11 Pages) STMICROELECTRONICS

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STPS30L60C

Characteristics

3/11

Figure 1.

Average forward power dissipation

versus average forward current (per

diode)

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

101214

161820

(W)

F(av)

δ=tp/T

(A)

F(av)

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

100

125

150

th(j-a)=Rth(j-c)

th(j-a)=15 °C/W

δ=tp/T

TO-220FPAB

(A)

F(av)

(°C)

amb

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

(TO-220AB, TO-247, D2PAK, I2PAK)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

(TO-220FPAB)

1E-3

1E-2

1E-1

1E+0

100

150

200

250

I (A)

Tc=25°C

Tc=125°C

Tc=75°C

t(s)

δ=0.5

100

120

1.E-03

1.E-02

1.E-01

1.E+00

C=50 °C

C=75 °C

C=125 °C

δ =0.5

TO-220FPAB

t(s)

I (A)

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