Potens semiconductor corp.

Ver.1.00

2

PDN02P15

150V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=

-250uA

-150

---

---

V

IDSS

Drain-Source Leakage Current

VDS=

-150V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=

-120V , VGS=0V , TJ=125℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=

-10V , ID=-1A

---

650

750

˙

m



VGS=

-6V , ID=-0.5A

---

700

950

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =

-250uA

-2

-3

-4

V

gfs

Forward Transconductance

VDS=

-10V , ID=-1A

---

2

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=

-75V , VGS=-10V , ID=-1A

---

4.4

8

nC

Qgs

Gate-Source Charge2 , 3

---

0.7

2

Qgd

Gate-Drain Charge2 , 3

---

1.5

3

Td(on)

Turn-On Delay Time2 , 3

VDD=

-75V , VGS=-10V , RG=10

ID=

-1A

---

12.5

20

ns

Tr

Rise Time2 , 3

---

8.9

18

Td(off)

Turn-Off Delay Time2 , 3

---

17.3

36

Tf

Fall Time2 , 3

---

11.5

24

Ciss

Input Capacitance

VDS=

-25V , VGS=0V , F=1MHz

---

430

700

pF

Coss

Output Capacitance

---

38

60

Crss

Reverse Transfer Capacitance

---

28

56

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

30

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-1

A

ISM

Pulsed Source Current

---

---

-2

A

VSD

Diode Forward Voltage

VGS=0V , IS=

-1A , TJ=25℃

---

---

-1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings