STP4NK50ZD datasheet(3/17 Pages) STMICROELECTRONICS

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STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD

Electrical ratings

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Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 IPAK/DPAK TO-220FP

VDS

Drain-source voltage (VGS = 0)

500

VDGR

Drain-gate voltage (RGS = 20KΩ)

500

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

3 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC=100°C

1.9

1.9 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

12 (1)

PTOT

Total dissipation at TC = 25°C

Derating factor

0.36

0.16

W/°C

VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

2800

dv/dt(3)

ISD ≤3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

TO-220

IPAK/DPAK

TO-220FP

Rthj-case

Thermal resistance junction-case Max

2.78

6.25

°C/W

Rthj-a

Thermal resistance junction-ambient Max

62.5

100

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

120

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