Potens semiconductor corp.

Ver.1.01

2

PDN0953S

100V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250µA

-100

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.08

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=-100V , VGS=0V , TJ=25

℃

---

---

1

µA

VDS=-80V , VGS=0V , TJ=125

℃

---

---

10

µA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-600mA

---

540

650

m



VGS=-4.5V , ID=-400mA

---

590

760

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250µA

-1.2

-1.8

-2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

4.6

---

mV/

℃

gfs

Forward Transconductance

VDS=-10V , ID=-0.5A

---

2

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=-50V , VGS=-10V ,

ID=-500mA

---

4.4

8.8

nC

Qgs

Gate-Source Charge2 , 3

---

0.5

1

Qgd

Gate-Drain Charge2 , 3

---

1.8

3.6

Td(on)

Turn-On Delay Time2 , 3

VDD=-50V , VGS=-10V , RG=3.3



ID=-0.5A

---

5

10

ns

Tr

Rise Time2 , 3

---

14.5

29

Td(off)

Turn-Off Delay Time2 , 3

---

20

40

Tf

Fall Time2 , 3

---

8

16

Ciss

Input Capacitance

VDS=-50V , VGS=-0V , F=1MHz

---

382

760

pF

Coss

Output Capacitance

---

29

60

Crss

Reverse Transfer Capacitance

---

18

36

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

31

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-0.84

A

ISM

Pulsed Source Current

---

---

-1.68

A

VSD

Diode Forward Voltage

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings