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PDP0949 Datasheet(PDF) 2 Page - Potens Semiconductor Corp. |
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PDP0949 Datasheet(HTML) 2 Page - Potens Semiconductor Corp. |
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2 / 5 page ![]() Potens semiconductor corp. Ver.1.00 2 PDP0949 100V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 --- --- V IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-80V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-10A --- 79 95 m VGS=-4.5V , ID=-8A --- 86 112 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V gfs Forward Transconductance VDS=-10V , IS=-3A --- 13 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=-50V , VGS=-10V , ID=-10A --- 40 60 nC Qgs Gate-Source Charge3 , 4 --- 6.5 10 Qgd Gate-Drain Charge3 , 4 --- 7.2 11 Td(on) Turn-On Delay Time3 , 4 VDD=-50V , VGS=-10V , RG=6 ID=-10A --- 5 10 ns Tr Rise Time3 , 4 --- 10 15 Td(off) Turn-Off Delay Time3 , 4 --- 15 20 Tf Fall Time3 , 4 --- 10 15 Ciss Input Capacitance VDS=-50V , VGS=0V , F=1MHz --- 2600 3900 pF Coss Output Capacitance --- 80 120 Crss Reverse Transfer Capacitance --- 56 85 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -20 A ISM Pulsed Source Current --- --- -40 A VSD Diode Forward Voltage VGS=0V , IS= -1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-100V, IS=-10A di/dt=100A/µs, TJ=25℃ --- 50 --- ns Qrr Reverse Recovery Charge --- 60 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-80V,VGS=-10V,L=0.1mH,IAS=-46A.,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (T J=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings |
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