Potens semiconductor corp.

Ver.1.00

2

PDP0958A

100V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

100

---

---

V

IDSS

Drain-Source Leakage Current

VDS=100V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=6A

---

65

85

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

2

3

4

V

`gfs

Forward Transconductance

VDS=10V , ID=3A

---

6

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=50V , VGS=10V , ID=6A

---

10.5

20

nC

Qgs

Gate-Source Charge2 , 3

---

4.8

9

Qgd

Gate-Drain Charge2 , 3

---

2.9

6

Td(on)

Turn-On Delay Time2 , 3

VDD=50V , VGS=10V , RG=25



ID=1A

---

73

140

ns

Tr

Rise Time2 , 3

---

36

72

Td(off)

Turn-Off Delay Time2 , 3

---

124

240

Tf

Fall Time2 , 3

---

25

50

Ciss

Input Capacitance

VDS=50V , VGS=0V , F=1MHz

---

615

1200

pF

Coss

Output Capacitance

---

47

80

Crss

Reverse Transfer Capacitance

---

29

60

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

2.1

4



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

20

A

ISM

Pulsed Source Current

---

---

40

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time2

IS=1A , dI/dt=100A/µs

TJ=25℃

---

18.5

---

ns

Qrr

Reverse Recovery Charge2

---

16

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

4.

VDD=50V,VGS=10V,L=0.1mH,IAS=19A.,RG=25,Starting TJ=25℃.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings