Potens semiconductor corp.

Ver.1.05

2

PDP0974A

100V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

100

---

---

V

IDSS

Drain-Source Leakage Current

VDS=100V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=85℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=20V , VDS=0V

---

---

100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=20A

---

5.2

6.5

m



VGS=6V , ID=10A

---

8

10

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

2

2.8

3

V

gfs

Forward Transconductance

VDS=10V , ID=5A

---

8

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=80V , VGS=10V , ID=10A

---

57.9

110

nC

Qgs

Gate-Source Charge3 , 4

---

10.8

20

Qgd

Gate-Drain Charge3 , 4

---

18.2

38

Td(on)

Turn-On Delay Time3 , 4

VDD=50V , VGS=10V , RG=6



ID=1A

---

24

48

ns

Tr

Rise Time3 , 4

---

19.8

39

Td(off)

Turn-Off Delay Time3 , 4

---

46

92

Tf

Fall Time3 , 4

---

26

52

Ciss

Input Capacitance

VDS=50V , VGS=0V , F=1MHz

---

3590

7180

pF

Coss

Output Capacitance

---

590

1180

Crss

Reverse Transfer Capacitance

---

30

60

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.5

3



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

100

A

ISM

Pulsed Source Current

---

---

200

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time

VGS=0V,IS=10A , di/dt=100A/µs

TJ=25℃

---

60

---

ns

Qrr

Reverse Recovery Charge

---

117

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=60V,VGS=10V,L=0.1mH,IAS=90A.,RG=25,Starting TJ=25℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings