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Absolute Maximum Ratings T

A = 25°C unless otherwise stated

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-100

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-5.5

V

Collector Current

IC

-5

A

Collector Current Pulsed

ICM

-10

A

Junction Temperature

TJ

200

°C

Storage Temperature

Tstg

-55 to 200

°C

PNP Transistor Bare Die – 2N5153

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V(BR)CBO

IC = -100µA, IE = 0

-100

-

-

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = -100mA, IB = 0

-80

-

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = -100µA, IC = 0

-5.5

-

-

V

VCE = -60V, VBE = 0

-

-

-1

µA

ICES

VCE = -100V, VBE = 0

-

-

-1

mA

Collector Cut-off Current

ICEO

VCE = -40V, IB = 0

-

-

-50

µA

VEB = -4V, IC = 0

-

-

-1

µA

Emitter Cut-off Current

IEBO

VEB = -5.5V, IC = 0

-

-

-1

mA

ON CHARACTERISTICS

VCE = -5V, IC = -50mA

50

-

-

-

VCE = -5V, IC = -2.5A

70

-

200

-

Forward-Current Transfer Ratio

hFE

VCE = -5V, IC = -5A

40

-

-

IC = -2.5A, IB = -250mA

-

-

-0.75

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC = -5A, IB = -500mA

-

-

-1.5

V

IC = -2.5A, IB = -250mA

-

-

-1.45

V

Base Saturation Voltage

VBE(sat)

IC = -5A, IB = -500mA

-

-

-2.2

V

Base-Emitter On Voltage

VBE(on)

VCE = -5V, IC = -250mA

-

-

-1.45

V

SMALL SIGNAL CHARACTERISTICS

1

Magnitude of AC forward current

transfer ratio

|hfe|

VCE = 5V, IC = 500mA, f = 10MHz

7

-

-

-

AC forward current transfer ratio

hfe

VCE = 5V, IC = 100mA, f = 1kHz

50

-

-

-

Collector Output Capacitance

Cobo

VCB = -10V, IE = 0, f = 1MHz

-

-

250

pF

Electrical Characteristics T

A = 25°C unless otherwise stated

Note 1: Not production testing in die form. Characterized by chip design and package test.

Rev 1.0

10/03/26