Potens semiconductor corp.

Ver.1.01

2

PDP8970

80V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

80

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.05

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=64V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=20A

---

2

2.6

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.5

2.2

3.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-5

---

mV/℃

gfs

Forward Transconductance

VDS=10V , ID=3A

---

18

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3,4

VDS=40V , VGS=10V , ID=10A

---

247

360

nC

Qgs

Gate-Source Charge3,4

---

63.5

125

Qgd

Gate-Drain Charge3,4

---

56

110

Td(on)

Turn-On Delay Time3,4

VDD=40V , VGS=10V , RG=10



ID=10A

---

71

140

ns

Tr

Rise Time3,4

---

103

200

Td(off)

Turn-Off Delay Time3,4

---

291

580

Tf

Fall Time3,4

---

170

340

Ciss

Input Capacitance

VDS=30V , VGS=0V , F=1MHz

---

15010

23000

pF

Coss

Output Capacitance

---

772

1200

Crss

Reverse Transfer Capacitance

---

81

160

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.8

3.6



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

200

A

ISM

Pulsed Source Current

---

---

400

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time

VGS=0V,IS=20A , di/dt=100A/µs

TJ=25℃

---

54

---

ns

Qrr

Reverse Recovery Charge

---

78

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=50V,VGS=10V,L=0.1mH,IAS=160A., Starting TJ=25℃

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings