Potens semiconductor corp.

Ver.1.01

2

PDP8980

80V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

80

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.04

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=64V , VGS=0V , TJ=85

℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=20V , VDS=0V

---

---

100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=30A

---

2.7

3.2

m



VGS=4.5V , ID=20A

---

3.7

4.6

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-6.2

---

mV/

℃

gfs

Forward Transconductance

VDS=10V , ID=3A

---

20

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=40V , VGS=10V , ID=20A

---

138

270

nC

Qgs

Gate-Source Charge3 , 4

---

22.4

44

Qgd

Gate-Drain Charge3 , 4

---

35.1

70

Td(on)

Turn-On Delay Time3 , 4

VDD=40V , VGS=10V , RG=1



ID=1A

---

17.2

34

ns

Tr

Rise Time3 , 4

---

18

36

Td(off)

Turn-Off Delay Time3 , 4

---

76

150

Tf

Fall Time3 , 4

---

84.4

170

Ciss

Input Capacitance

VDS=40V , VGS=0V , F=1MHz

---

7036

14000

pF

Coss

Output Capacitance

---

1490

2980

Crss

Reverse Transfer Capacitance

---

86

160

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.94

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

180

A

ISM

Pulsed Source Current

---

---

360

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25

℃

---

---

1

V

trr

Reverse Recovery Time3

IS=10A , dI/dt=100A/µs

TJ=25

℃

---

73.2

---

ns

Qrr

Reverse Recovery Charge3

---

170.7

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=25V,VGS=10V,L=0.1mH,IAS=115A.,RG=25

,Starting T

J

=25

℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings