Nexperia

PDTA143/114/124/144EQB series

50 V, 100 mA PNP resistor-equipped transistors

IC (mA)

-10-1

-10

-1

006aac839

-1

-10

VI(off)

(V)

-10-1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 8. PDTA143EQB: Off-state input voltage as a

function of collector current; typical values

VCB (V)

0

-50

-40

-20

-30

-10

006aac840

4

2

6

8

Cc

(pF)

0

f = 1 MHz

Tamb = 25 °C

Fig. 9. PDTA143EQB: Collector capacitance as a

function of collector-base voltage; typical

values

IC (mA)

-10-1

-102

-10

-1

006aac773

102

10

103

hFE

1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 10. PDTA114EQB: DC current gain as a function of

collector current; typical values

VCE (V)

0

-5

-4

-2

-3

-1

aaa-017927

-0.04

-0.06

-0.02

-0.08

-0.1

IC

(A)

0

IB = -0.08 mA

-0.24 mA

-0.32 mA

-0.40 mA

-0.48 mA

-0.56 mA

-0.64 mA

-0.72 mA

-0.80 mA

-0.16 mA

Tamb = 25 °C

Fig. 11. PDTA114EQB: Collector current as a function of

collector-emitter voltage; typical values

PDTA143_114_124_144EQB_SER

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Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 28 September 2021

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