Potens semiconductor corp.

Ver.1.00

2

PDU2318Z

20V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250µA

20

---

---

V

IDSS

Drain-Source Leakage Current

VDS=20V , VGS=0V , TJ=25℃

---

---

1

µA

VDS=16V , VGS=0V , TJ=125℃

---

---

10

µA

IGSS

Gate-Source Leakage Current

VGS=±10V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V , ID=1.5A

---

50

65

m



VGS=2.5V , ID=1.5A

---

66

86

VGS=1.8V , ID=1A

---

90

120

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250µA

0.3

0.55

1

V

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=10V , VGS=4.5V , ID=0.8A

---

2.7

4.5

nC

Qgs

Gate-Source Charge2 , 3

---

0.12

1.5

Qgd

Gate-Drain Charge2 , 3

---

0.76

2

Td(on)

Turn-On Delay Time2 , 3

VDD=10V , VGS=4.5V , RG=25



ID=0.8A

---

1.8

3

ns

Tr

Rise Time2 , 3

---

5.6

8.5

Td(off)

Turn-Off Delay Time2 , 3

---

11.3

18

Tf

Fall Time2 , 3

---

3.2

5

Ciss

Input Capacitance

VDS=15V , VGS=0V , F=1MHz

---

160

250

pF

Coss

Output Capacitance

---

40

60

Crss

Reverse Transfer Capacitance

---

30

45

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

1.6

A

ISM

Pulsed Source Current

---

---

3.2

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings