(SEE REVERSE SIDE)

R0

MPS455

NPN TRANSISTOR

TO-92 CASE

DATA SHEET

DESCRIPTION

The CENTRAL SEMICONDUCTOR MPS455 is a silicon NPN Medium Power Transistor, manufactured by the

epitaxial planar process, designed for general purpose amplifier and switching applications.

MAXIMUM RATINGS (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

160

V

Collector-Emitter Voltage

VCEO

140

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

1.0

A

Peak Collector Current

ICM

2.0

A

Power Dissipation

PD

1.0

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

125

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=140V

0.1

µA

IEBO

VEB=4.0V

0.1

µA

BVCBO

IC=100µA

160

V

BVCEO

IC=10mA

140

V

BVEBO

IE=100µA

5.0

V

VCE(SAT)

IC=150mA, IB=15mA

0.70

V

hFE

VCE=10V, IC=150mA

100

300

hFE

VCE=10V, IC=1.0A

10

fT

VCE=10V, IC=50mA, f=100MHz

100

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

15

pF