Absolute Maximum Ratings T

A = 25°C unless otherwise stated

Rev 1.0

07/07/17

NPN Transistor Bare Die, 2C2222A

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

75

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

600

mA

Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

-55 to 150

°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V(BR)CBO

IC = 10µA

75

-

-

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 10mA

40

-

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = 10µA

6

-

-

V

Collector Cut-off Current

ICEX

VCE = 60V, VEB = 3V

-

-

10

nA

Collector Cut-off Current

ICBO

VCB = 60V

-

-

10

nA

Emitter Cut-off Current

IEBO

VEB = 3V

-

-

100

nA

ON CHARACTERISTICS

VCE = 10V, IC = 0.1mA

35

-

-

-

VCE = 10V, IC = 1mA

50

-

-

-

VCE = 10V, IC = 10mA

75

-

-

-

VCE = 10V, IC = 150mA

100

-

300

-

VCE = 1V, IC = 100mA

50

-

-

-

Forward-Current Transfer Ratio

hFE

VCE = 10V, IC = 500mA

40

-

-

-

IC = 150mA, IB = 15mA

-

-

0.3

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 500mA, IB = 50mA

-

-

1

V

IC = 150mA, IB = 15mA

0.6

-

1.2

V

Base-Emitter Saturation Voltage

VBE(sat)

IC = 500mA, IB = 50mA

-

-

2

V

SMALL SIGNAL CHARACTERISTICS

1

Transition Frequency

fT

VCE = 20V, IE = -20mA

300

-

-

MHz

Output Capacitance

Cobo

VCB = 10V, IE = 0, f = 1MHz

-

-

8

Input Capacitance

Cibo

VEB = 0.5V, IC = 0, f = 1MHz

-

-

25

pF

SWITCHING CHARACTERISTICS

1

Delay Time

td

-

-

10

Rise Time

tr

VCC = 30V, IE = -0.5mA

IC= 150mA, IB1= 15mA

-

-

25

Storage Time

ts

-

-

225

Fall Time

tf

VCC = 30V, IC = 150mA

IB1 = IB2 = 15mA

-

-

60

ns

Electrical Characteristics T

A = 25°C unless otherwise stated

Note 1: Not production testing in die form, characterized by chip design and tested in package LAT.

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