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BC516 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BC516 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Silicon PNP Darlington Transistor BC516 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -30V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -1.0V(Max) @IC= -0.1A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -1 A PC Total Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 83.3 ℃ /W |
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