AP1N150D

1500V N-Channel Enhancement Mode MOSFET

AP1N150D REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

1500

1600

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 1500V, VGS= 0V, TJ=25ºC

--

--

1

μA

IGSS

Gate-Source Leakage

VGS = ±30V

--

--

±100

nA

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = 250µA

2.0

3.0

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS = 10V, ID = 0.1A

--

23

34

Ω

Ciss

Input Capacitance

VGS = 0V, VDS = 25V, f = 1.0MHz

--

101

--

pF

Coss

Output Capacitance

--

14.5

--

Crss

Reverse Transfer Capacitance

--

1.8

--

Qg

Total Gate Charge

VDD=1200V, ID =0.1A, VGS = 10V

--

11.5

--

nC

Qgs

Gate-Source Charge

--

0.7

--

Qgd

Gate-Drain Charge

--

7.8

--

td(on)

Turn-on Delay Time

VDD=200V, ID = 0.1A, RG = 25Ω

--

32

--

ns

tr

Turn-on Rise Time

--

17

--

td(off)

Turn-off Delay Time

--

72

--

tf

Turn-off Fall Time

--

255

--

IS

Continuous Body Diode Current

TC = 25 ºC

--

--

1

A

ISM

Pulsed Diode Forward Current

--

--

3

A

VSD

Body Diode Voltage

TJ = 25ºC, ISD = 0.1A, VGS = 0V

--

--

1.4

V

trr

Reverse Recovery Time

VGS = 0V,IS = 3A, diF/dt =100A

/μs

--

80

--

ns

Qrr

Reverse Recovery Charge

--

1.8

--

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.