AP2N100D

1000V N-Channel Enhancement Mode MOSFET

AP2N100D RVE3.9

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250µA

1000

1100

--

V

IDSS

Zero Gate Voltage Drain Current

VDS=1000V, VGS=0V, TJ=25ºC

--

--

1

μA

IGSS

Gate-Source Leakage

VGS = ±20V

--

--

±100

nA

VGS(th)

Gate-Source Threshold Voltage

VDS=VGS, ID= 250µA

3.0

--

4.0

V

RDS(on)

Drain-Source On-Resistance (Note3)

VGS=10V, ID=1.0A

--

6000

7200

mΩ

Ciss

Input Capacitance

VGS=0V，VDS=25V，f=1.0MHz

--

419

--

pF

Coss

Output Capacitance

--

45

--

Crss

Reverse Transfer Capacitance

--

9

--

Qg

Total Gate Charge

VDD=800V，ID=2.0A，VGS=15V

--

16

--

nC

Qgs

Gate-Source Charge

--

2

--

Qgd

Gate-Drain Charge

--

8

--

td(on)

Turn-on Delay Time

VDD=500V，ID=2.0A，RG=25 Ω

--

36

--

ns

tr

Turn-on Rise Time

--

12

--

td(off)

Turn-off Delay Time

--

100

--

tf

Turn-off Fall Time

--

43

--

IS

Continuous Body Diode Current

TC=25 ºC

--

--

2

A

ISM

Pulsed Diode Forward Current

--

--

8

VSD

Body Diode Voltage

TJ=25ºC, ISD=1.0A, VGS=0V

--

--

1.4

V

trr

Reverse Recovery Time

VGS=0V,IS=2.0A, diF/dt =100A /μs

--

432.5

--

ns

Qrr

Reverse Recovery Charge

--

424

--

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=10mH IAS=3A, VDD=90V, RG=25Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.