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AP05N06AF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP05N06AF
Description  60V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP05N06AF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP05N06AF
60V N-Channel Enhancement Mode MOSFET
AP05N06AF REV1.0
永源微電子科技有限公司
Description
The AP05N06AF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS=60V ID =0.5A
RDS(ON) < 1600mΩ @ VGS=10V
（Type：1100mΩ）
ESD Rating：HBM≥2200V
Application
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP05N06AF
DFN1.0*0.6-3L
K72
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
0.5
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
0.13
A
IDM
Pulsed Drain Current2
1.5
A
EAS
Single Pulse Avalanche Energy3
1
mJ
PD@TC=25℃
Total Power Dissipation4
350
mW
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient 1
128
℃/W
RθJC
Thermal Resistance Junction-Case1
15
℃/W


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