AP3N100FIPIT

1000V N-Channel Enhancement Mode MOSFET

AP3N100F/P/T RVE1.0

永源微電子科技有限公司

Description

The AP3N100F/P/T is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 1000V ID =3.0A

RDS(ON) < 5500mΩ @ VGS=10V （Type：4600mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3N100F

TO-220F-3L

AP3N100F XXX YYYY

1000

AP3N100P

TO-220-3L

AP3N100F XXX YYYY

1000

AP3N100T

TO-2633-L

AP3N100F XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

1000

V

ID@TC=25

℃

Continuous Drain Current, VGS @ -10V1

3.0

A

ID@TC=100

℃

Continuous Drain Current, VGS @ -10V1

1.8

A

IDM

Pulsed Drain Current

12

A

VGS

Gate-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy

80

mJ

IAS

Avalanche Current

4

A

EAR

Repetitive Avalanche Energy

0.32

mJ

PD

Power Dissipation (TC = 25ºC)

25

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

℃

RthJC

Thermal Resistance, Junction-to-Case

5

℃/W

RthJA

Thermal Resistance, Junction-to-Ambient

62.3

℃/W