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27512 Datasheet(PDF) 8 Page - STMicroelectronics

Part # 27512
Description  NMOS 512K 64K x 8 UV EPROM
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

27512 Datasheet(HTML) 8 Page - STMicroelectronics

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AI00774B
n = 1
Last
Addr
VERIFY
E = 1ms Pulse
++n
> 25
++ Addr
VCC = 6V, VPP = 12.5V
FAIL
CHECK ALL BYTES
VCC = 5V, VPP = 5V
YES
NO
YES
NO
YES
NO
E = 3ms Pulse by n
Figure 8. Fast Programming Flowchart
AI00773B
n = 0
Last
Addr
VERIFY
E = 500
µs Pulse
++n
= 25
++ Addr
VCC = 6.25V, VPP = 12.75V
FAIL
CHECK ALL BYTES
VCC = 5V, VPP = 5V
YES
NO
YES
NO
YES
NO
SET MARGIN MODE
RESET MARGIN MODE
Figure 9. PRESTO Programming Flowchart
DEVICE OPERATION (cont’d)
The Fast Programming Algorithm utilizes two differ-
ent pulse types : initial and overprogram. The du-
ration of the initial E pulse(s) is 1ms, which will then
be followed by a longer overprogram pulse of length
3ms by n (n is an iteration counter and is equal to
the number of the initial one millisecond pulses
applied to a particular M27512 location), before a
correct verify occurs. Up to 25 one-millisecond
pulses per byte are provided for before the over
program pulse is applied.
The entire sequence of program pulses is per-
formed at VCC = 6V and GVPP = 12.5V (byte verifi-
cations at VCC = 6V and GVPP = VIL). When the Fast
Programming cycle has been completed, all bytes
should be compared to the original data with
VCC = 5V.
PRESTO Programming Algorithm
PRESTO Programming Algorithm allows to pro-
gram the whole array with a guaranted margin, in
a typical time of less than 50 seconds (to be com-
pared with 283 seconds for the Fast algorithm).
This can be achieved with the STMicroelectronics
M27512 due to several design innovations de-
scribed in the next paragraph that improves pro-
gramming efficiency and brings adequate margin
for reliability. Before starting the programming the
internal MARGIN MODE circuit is set in order to
guarantee that each cell is programmed with
enough margin.
Then a sequence of 500
µs program pulses are
applied to each byte until a correct verify occurs.
No overprogram pulses are applied since the verify
in MARGIN MODE provides the necessary margin
to each programmed cell.
Program Inhibit
Programming of multiple M27512s in parallel with
different data is also easily accomplished. Except
for E, all like inputs (including GVPP) of the parallel
M27512 may be common. A TTL low level pulse
applied to a M27512’s E input, with GVpp at 12.5V,
will program that M27512. A high level E input
inhibits the other M27512s from being pro-
grammed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correctly
programmed. The verify is accomplished with GVpp
and E at VIL. Data should be verified tDV after the
falling edge of E.
M27512
8/11



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