AP5P06MI

-60V P-Channel Enhancement Mode MOSFET

AP5P06MI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ =25 ℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

-60

-

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ= 25°C

VDS = -60V, VGS = 0V

-

-

-1

μA

Zero Gate Voltage Drain Current TJ= 25°C

-

-

-100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250µA

-1

-1.6

-2.5

V

RDS(on)

Drain-Source On-Resistance4

VGS = -10V, ID = -10A

-

86

110

mΩ

VGS = -4.5V, ID = -5A

90

125

gfs

Forward Transconductance4

VDS = -10V, ID = -10A

-

30

-

S

Ciss

Input Capacitance

VDS = -30V, VGS = 0V, f =

1MHz

-

1022

-

pF

Coss

Output Capacitance

-

47

-

Crss

Reverse Transfer Capacitance

-

39

-

Rg

Gate Resistance

f = 1MHz

-

11

-

Ω

Qg

Total Gate Charge

VGS = -10V, VDS = -30V, ID=

-10A

-

17

-

nC

Qgs

Gate-Source Charge

-

2.9

-

Qgd

Gate-Drain Charge

-

7.4

-

td(on)

Turn-On Delay Time

VGS = -10V, VDD = -30V, RG =

3Ω, ID= -10A

-

8.5

-

ns

tr

Rise Time

-

19.9

-

td(off)

Turn-Off Delay Time

-

44

-

tf

Fall Time

-

12.2

-

VSD

Diode Forward Voltage4

IS = -1A, VGS = 0V

-

-

-1.2

V

IS

Continuous Source Current TC= 25°C

-

-

-

-13

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.