AP5P06MSI

-60V P-Channel Enhancement Mode MOSFET

AP5P06MSI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-60

-67

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-2A

---

110

130

mΩ

VGS=-4.5V , ID=-1.5A

---

140

190

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

-2.5

V

IDSS

Drain-Source Leakage Current

VDS=-48V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=-48V , VGS=0V , TJ=150

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-2A

---

5.8

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-4.5V , ID=-2A

---

5.9

---

nC

Qgs

Gate-Source Charge

---

2.9

---

Qgd

Gate-Drain Charge

---

1.8

---

Td(on)

Turn-On Delay Time

VDD=-12V , VGS=-10V , RG=3.3Ω,

ID=-1

---

10

---

ns

Tr

Rise Time

---

17

---

Td(off)

Turn-Off Delay Time

---

22

---

Tf

Fall Time

---

21

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , F=1MHz

---

715

---

pF

Coss

Output Capacitance

---

51

---

Crss

Reverse Transfer Capacitance

---

34

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-4

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

-

1.7