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AP6P03BF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP6P03BF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP6P03BF -30V P-Channel Enhancement Mode MOSFET AP6P03BF REV1.0 永源微電子科技有限公司 Description The AP6P03BF uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-6.2A RDS(ON) < 38mΩ @ VGS=10V (Type:32mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP6P03BF DFN2X2-6L AP6P03BF XXX YYYY 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ -10V1 -6.2 A ID@TC=100 ℃ Continuous Drain Current, VGS @ -10V1 -4.2 A IDM Pulsed Drain Current note1 -18.4 A PD Power Dissipation TA = 25 ℃ 2.15 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ RθJA Thermal Resistance, Junction to Ambient 125 ℃/W RθJC Thermal Resistance from Junction to Ambient2 104 ℃/W |
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