AP6P05MI datasheet(1/7 Pages) APME

Part #	AP6P05MI

Description	-55V P-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP6P05MI

-55V P-Channel Enhancement Mode MOSFET

AP6P05MI RVE1.0

永源微電子科技有限公司

Description

The AP6P05MI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -60V ID =-6.2A

RDS(ON) < 105mΩ @ VGS=10V (Type：86mΩ)

Application

Brushless motor

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP6P05MI

SOT23-3L

6P05MI-AP

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-60

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-6.2

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-4.3

A

IDM

Pulsed Drain Current2

-26

A

EAS

Single Pulse Avalanche Energy3

29.8

mJ

IAS

Avalanche Current

-24.4

A

PD@TC=25℃

Total Power Dissipation4

31.3

W

PD@TA=25℃

Total Power Dissipation4

2

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

4.0

℃

/W

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