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AP6V01LI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP6V01LI
Description  -16V PP-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP6V01LI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP6V01LI
-16V P+P-Channel Enhancement Mode MOSFET
AP6V01LI REV1.0
永源微電子科技有限公司
Description
The AP6V01LI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -16V ID =-6A
RDS(ON) < 25mΩ @ VGS=-4.5V (Type：18mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP6V01LI
SOT23-6L
AP6V01LI
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-16
V
VGS
Gate-Source Voltage
±12
V
ID@TA=25℃
Continuous Drain Current, VGS @ -4.5V1
-6
A
ID@TA=70℃
Continuous Drain Current, VGS @ -4.5V1
-3.4
A
IDM
Pulsed Drain Current2
-24
A
PD@TA=25℃
Total Power Dissipation3
1.31
W
PD@TA=70℃
Total Power Dissipation3
0.74
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
125
℃/W
RθJC
Thermal resistance, junction-case
7.4
℃/W


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