AP6V03S

-30V P+P-Channel Enhancement Mode MOSFET

AP6V03S REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= -250μA

-30

33

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS= 0V

-

-

-1

μA

IGSS

Gate-Source Leakage

VDS= 0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate-Source Threshold Voltage3

VDS= VGS, ID= -250μA

-1.2

-1.6

-2.5

V

RDS(on)

Drain-Source on-State Resistance3

VGS= -10V, ID= -3.0A

-

33

40

mΩ

VGS= -4.5V, ID= -2.0A

-

46

65

Ciss

Input Capacitance

VGS=0V , VDS = -15V,

f= 1.0MHz

-

530

-

pF

Coss

Output Capacitance

-

70

-

Crss

Reverse Transfer Capacitance

-

56

-

td(on)

Turn-on Delay Time4

VGS= -10V, VDS= -15V ,

RL= 15Ω,RGEN= 2.5Ω

-

14

-

nS

tr

Rise Time4

-

61

-

td(off)

Turn-off Delay Time4

-

19

-

tf

Fall Time4

-

10

-

Qg

Total Gate Charge4

VGS=-10V, VDS=-15V,

ID=-4.1A

-

6.8

-

nC

Qgs

Gate−Source Charge4

-

1.0

-

Qgd

Gate−Drain Charge4

-

1.4

-

VSD

Diode Forward Voltage

IS = -4.1A, VGS = 0V

-

-

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150

℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.