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AP10G04DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP10G04DF
Description  40V NP-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP10G04DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP10G04DF
40V N+P-Channel Enhancement Mode MOSFET
AP10G04DF RVE1.0
臺灣永源微電子科技有限公司
Description
The AP10G04DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 40V ID =9.8A
RDS(ON) < 17mΩ @ VGS=10V
VDS = -40V ID =-7.5A
RDS(ON) < 45mΩ @ VGS=-10V
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP10G04DF
PDFN3*3-8L
AP10G04DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Ch
P-Ch
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±
20
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
9.8
-7.5
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
5.2
-4.8
A
IDM
Pulsed Drain Current2
23
-22
A
EAS
Single Pulse Avalanche Energy3
16.2
39
mJ
IAS
Avalanche Current
18
-28
A
PD@TA=25℃
Total Power Dissipation4
1.67
1.67
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
75
℃
/W
RθJC
Thermal Resistance Junction-Case1
30
℃
/W


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