AP10H10DF

100V N+N-Channel Enhancement Mode MOSFET

AP10H10DF REV1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ. Max. Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

100

107

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=100V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.2

1.6

2.5

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS=10V, ID=10A

-

88

120

mΩ

VGS=4.5V, ID=8A

-

115

135

mΩ

Ciss

Input Capacitance

VDS=25V, VGS=0V,

f=1.0MHz

-

610

-

pF

Coss

Output Capacitance

-

40

-

pF

Crss

Reverse Transfer Capacitance

-

25

-

pF

Qg

Total Gate Charge

VDS=30V,

ID=10A,

VGS=10V

-

12

-

nC

Qgs

Gate-Source Charge

-

2.2

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

2.5

-

nC

td(on)

Turn-on Delay Time

VDS=30V, ID=5A,

RG=1.8Ω, VGS=10V

-

7

-

ns

tr

Turn-on Rise Time

-

5

-

ns

td(off)

Turn-off Delay Time

-

16

-

ns

tf

Turn-off Fall Time

-

6

-

ns

IS

Continuous Source Current1,5

VG=VD=0V , Force

Current

-

-

10

A

ISM

Pulsed Source Current2,5

-

-

40

A

VSD

Diode Forward Voltage2

VGS=0V, IS=10A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=10A, dI/dt=100A/μs

-

21

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

21

-

nC

Notes:

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD =80V,VGS =10V,L=0.1mH,IAS =3A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation