AP10H15DF

150V N+N-Channel Enhancement Mode MOSFET

AP10H15DF REV1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Limit

Min

Typ

Max

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

150

170

V

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.2

1.8

2.5

V

IGSS

Gate Leakage Current

VDS=0V, VGS=±20V

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=150V, VGS=0V

1

μA

RDS(ON)

Drain-Source On-Resistance

VGS=10V, ID= 7A

230

285

mΩ

RDS(ON)

Drain-Source On-Resistance

VGS=4.5V, ID= 6A

250

320

mΩ

VSD

Diode Forward Voltage

IS=1.8A, VGS=0V

0.8

1.2

V

Qg

Total Gate Charge

VDS=75V, VGS=10V, ID=10A

17.5

nC

Qgs

Gate-Source Charge

4.5

nC

Qgd

Gate-Drain Charge

4.7

nC

Ciss

Input Capacitance

VDS=25V, VGS=0V,f=1MHz

538

pF

Coss

Output Capacitance

55

pF

Crss

Reverse Transfer Capacitance

21

pF

td(on)

Turn-On Delay Time

VDS=75V, RL =10.68Ω,

VGEN=10V, RG=6Ω

11.6

ns

tr

Turn-On Rise Time

9.3

ns

td(off)

Turn-Off Delay Time

29.3

ns

tf

Turn-Off Fall Time

3.7

ns

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=72V,VGS=10V,L=0.1mH,IAS=10A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.