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AP20G04S Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP20G04S
Description  40V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP20G04S Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP20G04S
40V N+P-Channel Enhancement Mode MOSFET
AP20G04S RVE1.0
永源微電子科技有限公司
Description
The AP20G04S uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS =40V ID =28A
RDS(ON) < 10mΩ @ VGS=10V （Type：8.0mΩ）
VDS = -40V ID =-23A
RDS(ON) < 18mΩ @ VGS=-10V （Type：13mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20G04S
SOP-8L
AP20G04S XXX YYYY
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
28
-23
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
17
-15
A
IDM
Pulsed Drain Current2
68
-69
A
EAS
Single Pulse Avalanche Energy3
128
185
mJ
PD@TC=25℃
Total Power Dissipation4
48
51.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.3
℃
/W


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