AP20G06NF

60V N+P-Channel Enhancement Mode MOSFET

AP6G06S REV1.0

永源微電子科技有限公司

P-Electrical Characteristics (TJ =25 ℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250µA

-60

-

-

V

lGSS

Gate-body Leakage current

VDS=0V, VGS=±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ= 25°C

VDS=-60V, VGS=0V

-

-

-1

μA

Zero Gate Voltage Drain Current TJ= 25°C

-

-

-100

VGS(th)

Gate-Threshold Voltage

VDS=VGS, ID=-250µA

-1

-1.6

-2.5

V

RDS(on)

Drain-Source On-Resistance4

VGS=-10V, ID=-10A

-

68

90

mΩ

VGS=-4.5V, ID=-5A

81

95

gfs

Forward Transconductance4

VDS=-10V, ID=-10A

-

30

-

S

Ciss

Input Capacitance

VDS=-30V, VGS=0V,

f = 1MHz

-

1022

-

pF

Coss

Output Capacitance

-

47

-

Crss

Reverse Transfer Capacitance

-

39

-

Rg

Gate Resistance

f=1MHz

-

11

-

Ω

Qg

Total Gate Charge

VGS=-10V, VDS=-30V,

ID=-10A

-

17

-

nC

Qgs

Gate-Source Charge

-

2.9

-

Qgd

Gate-Drain Charge

-

7.4

-

td(on)

Turn-On Delay Time

VGS=-10V, VDD=-30V,

RG=3Ω, ID=-10A

-

8.5

-

ns

tr

Rise Time

-

19.9

-

td(off)

Turn-Off Delay Time

-

44

-

tf

Fall Time

-

12.2

-

VSD

Diode Forward Voltage4

IS=-1A, VGS=0V

-

-

-1.2

V

IS

Continuous Source Current TC= 25°C

-

-

-

-6.2

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating VDD =-48V,V GS =-10V ,L=0.1mH，RG=25Ω，ID=-14A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.