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AP25G03GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP25G03GD
Description  30V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP25G03GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP25G03GD
30V N+P-Channel Enhancement Mode MOSFET
AP25G03GD RVE1.0
永源微電子科技有限公司
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP25G03GD
TO-252-4L
AP25G03GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Ch
P-Ch
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
25
-24
A
ID@TA=100℃
Continuous Drain Current, VGS @ 10V1
10
-8
A
IDM
Pulsed Drain Current2
52
-45
A
EAS
Single Pulse Avalanche Energy3
22
45
mJ
IAS
Avalanche Current
21
-30
A
PD@TA=25℃
Total Power Dissipation4
18
18
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
5
℃
/W
Description
The AP25G03GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =25A
RDS(ON) < 22mΩ @ VGS=10V （Type：15mΩ）
VDS = -30V ID =-24A
RDS(ON) <32mΩ @ VGS=-10V （Type：25mΩ）
Application
Boost driver
Brushless motor


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