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AP25G04GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP25G04GD
Description  40V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP25G04GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP25G04GD
40V N+P-Channel Enhancement Mode MOSFET
AP25G04GD REV1.1
永源微電子科技有限公司
Description
The AP25G04GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =28A
RDS(ON) < 18mΩ @ VGS=10V （Type：14mΩ）
VDS = -40V ID =-25A
RDS(ON) < 36mΩ @ VGS=-10V （Type：31mΩ）
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP25G04GD
TO-252-4L
AP25G04GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Ch
P-Ch
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
28
25
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
18
-16
A
IDM
Pulsed Drain Current2
65
-60
A
EAS
Single Pulse Avalanche Energy3
160
155
mJ
PD@TA=25℃
Total Power Dissipation4
26
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
5
℃
/W


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